Product Summary

The FS150R12KT3 is an IGBT module.

Parametrics

FS150R12KT3 absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)DC-collector current: 150/200A; (3)Repetitive peak colleactor current: 300A; (4)Total power dissipation: 700W; (5)Gate-emitter peak voltage: +/-20V.

Features

FS150R12KT3 characteristics: (1)Collector-emitter saturation voltage: 2.15V; (2)Gate threshold voltage: 6.5V; (3)Gate charge: 1.40μC; (4)Internal gate resistor: 5.0Ω; (5)Input capacitance: 10.5nF; (6)Reverse transfer capacitance: 0.40nF; (7)Collector-emitter cut-off current: 5.0mA; (8)Gate-emitter leakage current: 400mA.

Diagrams

FS150R12KT3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FS150R12KT3
FS150R12KT3
Infineon Technologies
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Data Sheet
0-6: $151.17
6-10: $136.04
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(USD)		 Quantity
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Data Sheet
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6-10: $136.04
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Data Sheet
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