Product Summary

The IKW40N120H3 is an IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode..

Parametrics

IKW40N120H3 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)DC collector current (Tj=150℃)IC: 75A; (3)Pulsed collector current, tp limited by Tjmax ICpuls: 160A; (4)Turn off safe operating area VCE ≤ 1200V, Tj ≤ 175℃: 160A; (5)DC Diode forward current (Tj=150℃)IF: 75A; (6)Diode pulsed current, tp limited by Tjmax IFpuls: 160 A; (7)Gate-emitter voltage VGE: ±20 V; (8)Short circuit withstand time3)VGE = 15V, VCC ≤ 600V, Tj,start ≤ 175℃ tSC: 10 μs; (9)Power dissipation TC = 25℃ Ptot: 480 W; (10)Operating junction temperature Tj: -40 to +175℃; (11)Storage temperature Tstg: -55 to +150℃.

Features

IKW40N120H3 features: (1)Best in class TO247; (2)Short circuit withstand time – 10μs; (3)Designed for : Frequency Converters, Uninterrupted Power Supply; (4)TrenchStop 2nd generation for 1200 V applications offers: very tight parameter distribution, high ruggedness, temperature stable behavior; (5)Easy paralleling capability due to positive temperature coefficient in VCE(sat); (6)Low EMI; (7)Low Gate Charge; (8)Very soft, fast recovery anti-parallel EmCon HE diode; (9)Qualified according to JEDEC1 for target applications; (10)Pb-free lead plating; RoHS compliant.

Diagrams

IKW40N120H3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IKW40N120H3
IKW40N120H3

Infineon Technologies

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Data Sheet

0-130: $4.54
130-250: $4.17
250-500: $3.80
500-1000: $3.31
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IKW40N120H3
IKW40N120H3

Infineon Technologies

IGBT Transistors IGBT PRODUCTS

Data Sheet

0-130: $4.54
130-250: $4.17
250-500: $3.80
500-1000: $3.31
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Data Sheet

0-130: $4.91
130-250: $4.52
250-500: $4.12
500-1000: $3.59
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Data Sheet

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118-250: $2.74
250-500: $2.47
500-1000: $2.08
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Infineon Technologies

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Data Sheet

0-130: $5.05
130-250: $4.64
250-500: $4.24
500-1000: $3.68