(China (Mainland))
Product Summary
The 2MBI100U4H-170 is an IGBT MODULE.
Parametrics
2MBI100U4H-170 absolute maximum ratings: (1)Collector-Emitter voltage: 1700V; (2)Gate-Emitter voltage: ±20V; (3)Collector Power Dissipation: 540W; (4)Junction temperature: 150℃; (5)Storage temperature: -40 to 125℃.
Diagrams
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 2MBI100N-060-03 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NB-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NC-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NE-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100P-140 |
Other |
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Data Sheet |
Negotiable |
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2MBI100PC-140 |
Other |
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Data Sheet |
Negotiable |
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