(China (Mainland))
Product Summary
The 2MBI450U4N-120-50 is an IGBT module.
Parametrics
2MBI450U4N-120-50 absolute maximum ratings: (1)Collector-Emitter voltage VCES: 1700V; (2)Gate-Emitter voltage VGES: ±20 V; (3)Collector current Ic Continuous Tc=25℃: 600A; (4)Collector power dissipation Pc: 2080 W; (5)Junction temperature Tj: 150℃; (6)Storage temperature Tstg: -40 to +125℃.
Features
2MBI450U4N-120-50 features: (1)High speed switching; (2)Voltage drive; (3)Low inductance module structure.
Diagrams
 |
 2MBI100N-060-03 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2MBI100NB-120 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2MBI100NC-120 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2MBI100NE-120 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2MBI100P-140 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2MBI100PC-140 |
Other |
|
Data Sheet |
Negotiable |
|
||||
