(China (Mainland))
Product Summary
The 2MBI200N-060 is an IGBT module.
Parametrics
2MBI200N-060 absolute maximum ratings: (1)Collector-Emitter Voltage VCES: 600 V; (2)Gate -Emitter Voltage VGES: ± 20 V; (3)Collector Current IC: 400A; (4)Max. Power Dissipation PC: 780 W; (5)Operating Temperature Tj: +150 ℃; (6)Storage Temperature Tstg: -40 ~ +125 ℃; (7)Isolation Voltage A.C. 1min. Vis: 2500 V.
Features
2MBI200N-060 features: (1)Square RBSOA; (2)Low Saturation Voltage; (3)Less Total Power Dissipation; (4)Improved FWD Characteristic; (5)Minimized Internal Stray Inductance; (6)Overcurrent Limiting Function (~3 Times Rated Current).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2MBI200N-060 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2MBI200N-060-03 |
Other |
|
Data Sheet |
Negotiable |
|
||||
