Product Summary

The BSM50GX120DN2 is one member of the IGBT power module that has three points of features:(1)package with insulated metal base plate;(2)including fast free-wheeling diodes;(3)single switch with chopper diode.

Parametrics

Absolute maximum ratings: (1)collector-emitter voltage:1200 V;(2)collector-gate voltage (RGE=20 kΩ): 1200 V;(3)gate-emitter voltage:±20 V;(4)DC collector current (Tc=25℃):78 A;(5)DC collector current (Tc=80℃):50 A;(6)pulsed collector current, tp=1 ms (Tc=25℃):156 A;(7)pulsed collector current, tp=1 ms (Tc=80℃):100 A;(8)power dissipation per IGBT (Tc=25℃):400 W;(9)chip temperature:+150℃;(10)storage temperature:-55 to +150℃.

Features

Features: (1)package with insulated metal base plate;(2)including fast free-wheeling diodes;(3)single switch with chopper diode.

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM50GX120DN2
BSM50GX120DN2

Infineon Technologies

IGBT Modules

Data Sheet

0-1: $63.00
1-10: $57.00
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(USD)
Quantity
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Data Sheet

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