Product Summary
The BSM50GX120DN2 is one member of the IGBT power module that has three points of features:(1)package with insulated metal base plate;(2)including fast free-wheeling diodes;(3)single switch with chopper diode.
Parametrics
Absolute maximum ratings: (1)collector-emitter voltage:1200 V;(2)collector-gate voltage (RGE=20 kΩ): 1200 V;(3)gate-emitter voltage:±20 V;(4)DC collector current (Tc=25℃):78 A;(5)DC collector current (Tc=80℃):50 A;(6)pulsed collector current, tp=1 ms (Tc=25℃):156 A;(7)pulsed collector current, tp=1 ms (Tc=80℃):100 A;(8)power dissipation per IGBT (Tc=25℃):400 W;(9)chip temperature:+150℃;(10)storage temperature:-55 to +150℃.
Features
Features: (1)package with insulated metal base plate;(2)including fast free-wheeling diodes;(3)single switch with chopper diode.
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM50GX120DN2 |
Infineon Technologies |
IGBT Modules |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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BSM50GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A CHOPPER |
Data Sheet |
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Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
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BSM50GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
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IGBT Modules 1700V 50A 500W HALF-BRIDGE |
Data Sheet |
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BSM50GB60DLC |
Infineon Technologies |
IGBT Modules 600V 50A DUAL |
Data Sheet |
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BSM50GD120DLC |
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IGBT Modules 1200V 50A 3-PHASE |
Data Sheet |
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