Product Summary
The IKW40N120T2 is an IGBT in 2 generation TrenchStop with soft, fast recovery anti-parallel EmCon diode.
Parametrics
IKW40N120T2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)DC collector current (Tj=150℃)IC: 75A; (3)Pulsed collector current, tp limited by Tjmax ICpul s: 160A; (4)Turn off safe operating area VCE ≤ 1200V, Tj ≤ 175℃: 160A; (5)DC Diode forward current (Tj=150℃)IF: 75A; (6)Diode pulsed current, tp limited by Tjmax IFpu l s: 160 A; (7)Gate-emitter voltage VGE: ±20 V; (8)Short circuit withstand time VGE = 15V, VCC ≤ 600V, Tj,start ≤ 175℃ tSC: 10 μs; (9)Power dissipation TC = 25℃ Pt o: 480 W; (10)Operating junction temperature Tj: -40+175℃; (11)Storage temperature Ts tg: -55: +150℃.
Features
IKW40N120T2 features: (1)Best in class TO247; (2)Short circuit withstand time – 10μs; (3)Designed for : Frequency Converters, Uninterrupted Power Supply; (4)TrenchStop 2nd generation for 1200 V applications offers : very tight parameter distribution; (5)high ruggedness, temperature stable behavior; (6)Easy paralleling capability due to positive temperature coefficient in VCE(sat); (7)Low EMI; (8)Low Gate Charge; (9)Very soft, fast recovery anti-parallel EmCon HE diode; (10)Qualified according to JEDEC1 for target applications; (11)Pb-free lead plating; RoHS compliant.
Diagrams
<IMG border=0 alt="IKW40N120T2 pin connection" src="http://www.seekic.com/uploadfile/ic-mfg/201212133289582.jpg">
Image | Part No | Mfg | Description | Pricing (USD) |
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IKW40N120T2 |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1200V 40A |
Data Sheet |
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IKW40N120T2 |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1200V 40A |
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