Product Summary

The BSM100GT120DN2 is an IGBT Power Module.

Parametrics

BSM100GT120DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW VCGR: 1200V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current IC: 150 A; (5)Pulsed collector current, tp = 1 ms ICpuls: 300A; (6)Power dissipation per IGBT TC = 25 ℃ Ptot: 680 W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -55 to + 150℃.

Features

BSM100GT120DN2 features: (1)Three single switches; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)Solderable Terminals.

Diagrams

BSM100GT120DN2 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM100GT120DN2
BSM100GT120DN2
Infineon Technologies
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Data Sheet
Negotiable 
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(USD)		 Quantity
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Data Sheet
0-1: $44.53
1-10: $40.07
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Data Sheet
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BSM100GAR120DN2
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Data Sheet
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BSM100GB120DLC
BSM100GB120DLC
Infineon Technologies
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Data Sheet
0-6: $78.93
6-10: $71.03
BSM100GB120DLCK
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Infineon Technologies
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Data Sheet
0-1: $49.93
1-5: $47.43
5-10: $44.93
10-50: $43.44
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BSM100GB120DN2
Infineon Technologies
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Data Sheet
0-1: $82.74
1-10: $74.47